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Introduction Yangjie Technology recently launched the Jie Guan self-produced 1200V 120mΩ SiC MOSFET product, available in three packaging types: TO-247AB, TO-247-4L, and TO-263-7L. Designed for power electronics applications that demand ultimate energy efficiency and system compactness, it achieves a perfect balance between conduction loss and switching performance, specifically aimed at replacing traditional silicon-based super junction MOSFETs.
Features Leveraging the physical properties of SiC materials, this device features extremely low parasitic capacitance and very fast switching speeds. Its body diode has a very low reverse recovery charge (Qrr), which can significantly reduce switching losses, enabling power systems to easily achieve high-frequency designs and greatly enhance power density.
It supports junction temperatures of up to 175°C. Compared to silicon devices of the same specifications, it can significantly reduce heatsink size and even allow fanless cooling in some low power density designs, reducing the overall system cost.
SPECIFICATION

YJD2120120B7YG3 YJD2120120NCFYG3 YJD2120120NCTYG3

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