yl23455永利

CN EN
Home
About Us
Newpros
IGBT Discrete For PTC of Auto Industry
IGBT Discrete For PTC of Auto Industry Back
 PDF

Introduction 1.SuperTO-220standardpackaging
2.VCES=1200V，IC=40A~80A；
3.TheproductismainlyusedinPTC application;
4.ThehighfrequencyIGBTmodulesandothermarket mainstream product sarecompletely pintopin alternatives；
5.EnvironmentallyfriendlycomplyingwithRoHSstandards；
Features 1.Trench-FSstructurehasbetterbalanceofblockingcapacityandLowsaturationvoltage;
2.Maximum junctiontemperatureTjmax=175℃;
3.HighefficiencycharacteristicswithverylowVce(sat)andslowturn-offcharacteristics,
suitableforPTC applications;；
SPECIFICATION

DGR40N120ATL0AQ DGR80N120ATL1BQ DGS40N120ATL0AQ DGS80N120ATL1BQ

Related new products

120V SGT process N-channel MOSFET

New N40V SGT MOSFETs for Sweeper

Small Signal Schottky and Switching Diode in DFN0603 Package

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

SGT MOSFET for PV Microinverter

Low Power SCR&TRIAC for Leakage Protection

IGBT high frequency series C1 module

SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies

Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter

JC
网站地图